矽源特MXN3050G是VDS=30V,ID=50A，的N-Channel MOSFET.MXN3050G提供DFN5*6-8L

矽源特MXN3050G概述：

MXN3050G是VDS=30V,ID=50AMXC，RDS(ON)<9m?，@VGS=10V，RDS(ON)<13m?，@VGS=-4.5V的N-Channel MOSFET.MXN3050G提供DFN5*6-8L封装.

The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications.

矽源特MXN3050G特性：

VDS = 30V,ID = 50A

RDS(ON) < 9m? @ VGS=10V

RDS(ON) < 13m? @ VGS=-4.5V

Low density cell desig

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

矽源特MXN3050G应用：

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

MXN3050G典型应用及引脚：