矽源特MXN3060是VDS=30V,ID=80A的N-Channel MOS.MXN3060提供DFN5X6-8L封装.

矽源特MXN3060概述：

矽源特MXN3060是VDS=30V,ID=80AMXC，RDS(ON)(Typ.)5.0m?，@VGS=10V，RDS(ON)(Typ.)6m?，@VGS=-4.5V的N-Channel MOSFET.矽源特MXN3060提供DFN5X6-8L封装.

The MXN3060 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications.

矽源特MXN3060特性：

VDS = 30V,ID = 80A

RDS(ON) (Typ.)5.0m? @ VGS=10V

RDS(ON) (Typ.)6m? @ VGS=-4.5V

Low density cell desig

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

矽源特MXN3060应用：

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

矽源特MXN3060典型应用及引脚：