矽源特MXD30N50是VDS=30V，ID=50A，RDS(ON)(Typ.)7mΩ的N沟道MOSFET.

矽源特MXD30N50概述：

MXD30N50是VDS=30VMXC，ID=50A，RDS(ON)(Typ.)7mΩ，@Vgs=10V，RDS(ON)(Typ.)11mΩ，@Vgs=4.5V的N沟道MOSFET.MXD30N50的丝印是3050K.MXD30N50提供TO-252-2L封装.

The MXD30N50 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge .It can be used in a wide variety of applications.

矽源特MXD30N50特性：

VDS =30VMXC，ID =50A

RDS(ON)(Typ.)7mΩ @ Vgs=10V

RDS(ON)(Typ.)11mΩ@ Vgs=4.5V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

矽源特MXD30N50应用：

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

MXD30N50典型应用及引脚图：